779 lines
20 KiB
C++
779 lines
20 KiB
C++
/*****************************************************************************
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* CACTI 7.0
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* SOFTWARE LICENSE AGREEMENT
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* Copyright 2015 Hewlett-Packard Development Company, L.P.
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* All Rights Reserved
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*
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* Redistribution and use in source and binary forms, with or without
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* modification, are permitted provided that the following conditions are
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* met: redistributions of source code must retain the above copyright
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* notice, this list of conditions and the following disclaimer;
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* redistributions in binary form must reproduce the above copyright
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* notice, this list of conditions and the following disclaimer in the
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* documentation and/or other materials provided with the distribution;
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* neither the name of the copyright holders nor the names of its
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* contributors may be used to endorse or promote products derived from
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* this software without specific prior written permission.
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* THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS
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* "AS IS" AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT
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* LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR
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* A PARTICULAR PURPOSE ARE DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT
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* OWNER OR CONTRIBUTORS BE LIABLE FOR ANY DIRECT, INDIRECT, INCIDENTAL,
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* SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES (INCLUDING, BUT NOT
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* LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; LOSS OF USE,
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* DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND ON ANY
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* THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT
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* (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE
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* OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.”
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*
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***************************************************************************/
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#ifndef __PARAMETER_H__
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#define __PARAMETER_H__
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#include "area.h"
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#include "const.h"
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#include "cacti_interface.h"
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#include "io.h"
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// parameters which are functions of certain device technology
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/**
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class TechnologyParameter
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{
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public:
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class DeviceType
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{
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public:
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double C_g_ideal;
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double C_fringe;
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double C_overlap;
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double C_junc; // C_junc_area
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double C_junc_sidewall;
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double l_phy;
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double l_elec;
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double R_nch_on;
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double R_pch_on;
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double Vdd;
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double Vth;
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double Vcc_min;//allowed min vcc; for memory cell it is the lowest vcc for data retention. for logic it is the vcc to balance the leakage reduction and wakeup latency
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double I_on_n;
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double I_on_p;
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double I_off_n;
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double I_off_p;
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double I_g_on_n;
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double I_g_on_p;
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double C_ox;
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double t_ox;
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double n_to_p_eff_curr_drv_ratio;
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double long_channel_leakage_reduction;
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double Mobility_n;
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DeviceType(): C_g_ideal(0), C_fringe(0), C_overlap(0), C_junc(0),
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C_junc_sidewall(0), l_phy(0), l_elec(0), R_nch_on(0), R_pch_on(0),
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Vdd(0), Vth(0), Vcc_min(0),
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I_on_n(0), I_on_p(0), I_off_n(0), I_off_p(0),I_g_on_n(0),I_g_on_p(0),
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C_ox(0), t_ox(0), n_to_p_eff_curr_drv_ratio(0), long_channel_leakage_reduction(0),
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Mobility_n(0) { };
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void reset()
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{
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C_g_ideal = 0;
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C_fringe = 0;
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C_overlap = 0;
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C_junc = 0;
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l_phy = 0;
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l_elec = 0;
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R_nch_on = 0;
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R_pch_on = 0;
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Vdd = 0;
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Vth = 0;
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Vcc_min = 0;
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I_on_n = 0;
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I_on_p = 0;
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I_off_n = 0;
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I_off_p = 0;
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I_g_on_n = 0;
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I_g_on_p = 0;
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C_ox = 0;
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t_ox = 0;
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n_to_p_eff_curr_drv_ratio = 0;
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long_channel_leakage_reduction = 0;
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Mobility_n = 0;
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}
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void display(uint32_t indent = 0);
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};
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class InterconnectType
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{
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public:
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double pitch;
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double R_per_um;
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double C_per_um;
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double horiz_dielectric_constant;
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double vert_dielectric_constant;
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double aspect_ratio;
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double miller_value;
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double ild_thickness;
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InterconnectType(): pitch(0), R_per_um(0), C_per_um(0) { };
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void reset()
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{
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pitch = 0;
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R_per_um = 0;
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C_per_um = 0;
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horiz_dielectric_constant = 0;
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vert_dielectric_constant = 0;
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aspect_ratio = 0;
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miller_value = 0;
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ild_thickness = 0;
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}
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void display(uint32_t indent = 0);
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};
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class MemoryType
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{
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public:
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double b_w;
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double b_h;
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double cell_a_w;
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double cell_pmos_w;
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double cell_nmos_w;
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double Vbitpre;
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double Vbitfloating;//voltage when floating bitline is supported
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void reset()
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{
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b_w = 0; //fs and tech
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b_h = 0; //fs and tech
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cell_a_w = 0; // ram_cell_tech_type
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cell_pmos_w = 0; //fs
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cell_nmos_w = 0;
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Vbitpre = 0;
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Vbitfloating = 0;
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}
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void display(uint32_t indent = 0);
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};
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class ScalingFactor
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{
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public:
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double logic_scaling_co_eff;
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double core_tx_density;
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double long_channel_leakage_reduction;
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ScalingFactor(): logic_scaling_co_eff(0), core_tx_density(0),
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long_channel_leakage_reduction(0) { };
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void reset()
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{
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logic_scaling_co_eff= 0;
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core_tx_density = 0;
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long_channel_leakage_reduction= 0;
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}
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void display(uint32_t indent = 0);
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};
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double ram_wl_stitching_overhead_; //fs
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double min_w_nmos_; //fs
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double max_w_nmos_; //fs
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double max_w_nmos_dec; //fs+ ram_cell_tech_type
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double unit_len_wire_del; //wire_inside_mat
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double FO4; //fs
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double kinv; //fs
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double vpp; //input
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double w_sense_en;//fs
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double w_sense_n; //fs
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double w_sense_p; //fs
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double sense_delay; // input
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double sense_dy_power; //input
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double w_iso; //fs
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double w_poly_contact; //fs
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double spacing_poly_to_poly; //fs
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double spacing_poly_to_contact;//fs
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//CACTI3DD TSV params
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double tsv_parasitic_capacitance_fine;
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double tsv_parasitic_resistance_fine;
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double tsv_minimum_area_fine;
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double tsv_parasitic_capacitance_coarse;
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double tsv_parasitic_resistance_coarse;
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double tsv_minimum_area_coarse;
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//fs
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double w_comp_inv_p1;
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double w_comp_inv_p2;
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double w_comp_inv_p3;
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double w_comp_inv_n1;
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double w_comp_inv_n2;
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double w_comp_inv_n3;
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double w_eval_inv_p;
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double w_eval_inv_n;
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double w_comp_n;
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double w_comp_p;
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double dram_cell_I_on; //ram_cell_tech_type
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double dram_cell_Vdd;
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double dram_cell_I_off_worst_case_len_temp;
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double dram_cell_C;
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double gm_sense_amp_latch; // depends on many things
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double w_nmos_b_mux;//fs
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double w_nmos_sa_mux;//fs
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double w_pmos_bl_precharge;//fs
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double w_pmos_bl_eq;//fs
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double MIN_GAP_BET_P_AND_N_DIFFS;//fs
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double MIN_GAP_BET_SAME_TYPE_DIFFS;//fs
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double HPOWERRAIL;//fs
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double cell_h_def;//fs
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double chip_layout_overhead; //input
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double macro_layout_overhead;
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double sckt_co_eff;
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double fringe_cap;//input
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uint64_t h_dec; //ram_cell_tech_type
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DeviceType sram_cell; // SRAM cell transistor
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DeviceType dram_acc; // DRAM access transistor
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DeviceType dram_wl; // DRAM wordline transistor
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DeviceType peri_global; // peripheral global
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DeviceType cam_cell; // SRAM cell transistor
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DeviceType sleep_tx; // Sleep transistor cell transistor
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InterconnectType wire_local;
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InterconnectType wire_inside_mat;
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InterconnectType wire_outside_mat;
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ScalingFactor scaling_factor;
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MemoryType sram;
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MemoryType dram;
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MemoryType cam;
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void display(uint32_t indent = 0);
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void reset()
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{
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dram_cell_Vdd = 0;
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dram_cell_I_on = 0;
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dram_cell_C = 0;
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vpp = 0;
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sense_delay = 0;
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sense_dy_power = 0;
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fringe_cap = 0;
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// horiz_dielectric_constant = 0;
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// vert_dielectric_constant = 0;
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// aspect_ratio = 0;
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// miller_value = 0;
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// ild_thickness = 0;
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dram_cell_I_off_worst_case_len_temp = 0;
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sram_cell.reset();
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dram_acc.reset();
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dram_wl.reset();
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peri_global.reset();
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cam_cell.reset();
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sleep_tx.reset();
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scaling_factor.reset();
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wire_local.reset();
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wire_inside_mat.reset();
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wire_outside_mat.reset();
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sram.reset();
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dram.reset();
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cam.reset();
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chip_layout_overhead = 0;
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macro_layout_overhead = 0;
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sckt_co_eff = 0;
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}
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};
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**/
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//ali
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class DeviceType
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{
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public:
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double C_g_ideal;
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double C_fringe;
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double C_overlap;
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double C_junc; // C_junc_area
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double C_junc_sidewall;
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double l_phy;
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double l_elec;
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double R_nch_on;
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double R_pch_on;
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double Vdd;
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double Vth;
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double Vcc_min;//allowed min vcc; for memory cell it is the lowest vcc for data retention. for logic it is the vcc to balance the leakage reduction and wakeup latency
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double I_on_n;
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double I_on_p;
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double I_off_n;
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double I_off_p;
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double I_g_on_n;
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double I_g_on_p;
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double C_ox;
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double t_ox;
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double n_to_p_eff_curr_drv_ratio;
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double long_channel_leakage_reduction;
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double Mobility_n;
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// auxilary parameters
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double Vdsat;
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double gmp_to_gmn_multiplier;
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DeviceType(): C_g_ideal(0), C_fringe(0), C_overlap(0), C_junc(0),
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C_junc_sidewall(0), l_phy(0), l_elec(0), R_nch_on(0), R_pch_on(0),
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Vdd(0), Vth(0), Vcc_min(0),
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I_on_n(0), I_on_p(0), I_off_n(0), I_off_p(0),I_g_on_n(0),I_g_on_p(0),
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C_ox(0), t_ox(0), n_to_p_eff_curr_drv_ratio(0), long_channel_leakage_reduction(0),
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Mobility_n(0) { reset();};
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void assign(const string & in_file, int tech_flavor, unsigned int temp);
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void interpolate(double alpha, const DeviceType& dev1, const DeviceType& dev2);
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void reset()
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{
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C_g_ideal=0;
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C_fringe=0;
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C_overlap=0;
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C_junc=0; // C_junc_area
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C_junc_sidewall=0;
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l_phy=0;
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l_elec=0;
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R_nch_on=0;
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R_pch_on=0;
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Vdd=0;
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Vth=0;
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Vcc_min=0;//allowed min vcc, for memory cell it is the lowest vcc for data retention. for logic it is the vcc to balance the leakage reduction and wakeup latency
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I_on_n=0;
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I_on_p=0;
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I_off_n=0;
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I_off_p=0;
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I_g_on_n=0;
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I_g_on_p=0;
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C_ox=0;
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t_ox=0;
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n_to_p_eff_curr_drv_ratio=0;
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long_channel_leakage_reduction=0;
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Mobility_n=0;
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// auxilary parameters
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Vdsat=0;
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gmp_to_gmn_multiplier=0;
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}
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void display(uint32_t indent = 0) const;
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bool isEqual(const DeviceType & dev);
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};
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class InterconnectType
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{
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public:
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double pitch;
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double R_per_um;
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double C_per_um;
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double horiz_dielectric_constant;
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double vert_dielectric_constant;
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double aspect_ratio;
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double miller_value;
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double ild_thickness;
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//auxilary parameters
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double wire_width;
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double wire_thickness;
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double wire_spacing;
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double barrier_thickness;
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double dishing_thickness;
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double alpha_scatter;
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double fringe_cap;
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InterconnectType(): pitch(0), R_per_um(0), C_per_um(0) { reset(); };
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void reset()
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{
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pitch=0;
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R_per_um=0;
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C_per_um=0;
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horiz_dielectric_constant=0;
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vert_dielectric_constant=0;
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aspect_ratio=0;
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miller_value=0;
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ild_thickness=0;
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//auxilary parameters
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wire_width=0;
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wire_thickness=0;
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wire_spacing=0;
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barrier_thickness=0;
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dishing_thickness=0;
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alpha_scatter=0;
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fringe_cap=0;
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}
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void assign(const string & in_file, int projection_type, int tech_flavor);
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void interpolate(double alpha, const InterconnectType & inter1, const InterconnectType & inter2);
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void display(uint32_t indent = 0);
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bool isEqual(const InterconnectType & inter);
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};
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class MemoryType
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{
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public:
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double b_w;
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double b_h;
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double cell_a_w;
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double cell_pmos_w;
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double cell_nmos_w;
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double Vbitpre;
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double Vbitfloating;//voltage when floating bitline is supported
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// needed to calculate b_w b_h
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double area_cell;
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double asp_ratio_cell;
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MemoryType(){reset();}
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void reset()
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{
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b_w=0;
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b_h=0;
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cell_a_w=0;
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cell_pmos_w=0;
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cell_nmos_w=0;
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Vbitpre=0;
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Vbitfloating=0;
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}
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void assign(const string & in_file, int tech_flavor, int cell_type); // sram(0),cam(1),dram(2)
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void interpolate(double alpha, const MemoryType& dev1, const MemoryType& dev2);
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void display(uint32_t indent = 0) const;
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bool isEqual(const MemoryType & mem);
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};
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class ScalingFactor
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{
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public:
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double logic_scaling_co_eff;
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double core_tx_density;
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double long_channel_leakage_reduction;
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ScalingFactor(): logic_scaling_co_eff(0), core_tx_density(0),
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long_channel_leakage_reduction(0) { reset(); };
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void reset()
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{
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logic_scaling_co_eff=0;
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core_tx_density=0;
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long_channel_leakage_reduction=0;
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}
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void assign(const string & in_file);
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void interpolate(double alpha, const ScalingFactor& dev1, const ScalingFactor& dev2);
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void display(uint32_t indent = 0);
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bool isEqual(const ScalingFactor & scal);
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};
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// parameters which are functions of certain device technology
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class TechnologyParameter
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{
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public:
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double ram_wl_stitching_overhead_; //fs
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double min_w_nmos_; //fs
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double max_w_nmos_; //fs
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double max_w_nmos_dec; //fs+ ram_cell_tech_type
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double unit_len_wire_del; //wire_inside_mat
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double FO4; //fs
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double kinv; //fs
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double vpp; //input
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double w_sense_en;//fs
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double w_sense_n; //fs
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double w_sense_p; //fs
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double sense_delay; // input
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double sense_dy_power; //input
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double w_iso; //fs
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double w_poly_contact; //fs
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double spacing_poly_to_poly; //fs
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double spacing_poly_to_contact;//fs
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//CACTI3D auxilary variables
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double tsv_pitch;
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double tsv_diameter;
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double tsv_length;
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double tsv_dielec_thickness;
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double tsv_contact_resistance;
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double tsv_depletion_width;
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double tsv_liner_dielectric_constant;
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//CACTI3DD TSV params
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double tsv_parasitic_capacitance_fine;
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double tsv_parasitic_resistance_fine;
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double tsv_minimum_area_fine;
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double tsv_parasitic_capacitance_coarse;
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|
double tsv_parasitic_resistance_coarse;
|
|
double tsv_minimum_area_coarse;
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|
|
|
//fs
|
|
double w_comp_inv_p1;
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|
double w_comp_inv_p2;
|
|
double w_comp_inv_p3;
|
|
double w_comp_inv_n1;
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|
double w_comp_inv_n2;
|
|
double w_comp_inv_n3;
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|
double w_eval_inv_p;
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|
double w_eval_inv_n;
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|
double w_comp_n;
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|
double w_comp_p;
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|
|
|
double dram_cell_I_on; //ram_cell_tech_type
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double dram_cell_Vdd;
|
|
double dram_cell_I_off_worst_case_len_temp;
|
|
double dram_cell_C;
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|
double gm_sense_amp_latch; // depends on many things
|
|
|
|
double w_nmos_b_mux;//fs
|
|
double w_nmos_sa_mux;//fs
|
|
double w_pmos_bl_precharge;//fs
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|
double w_pmos_bl_eq;//fs
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|
double MIN_GAP_BET_P_AND_N_DIFFS;//fs
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|
double MIN_GAP_BET_SAME_TYPE_DIFFS;//fs
|
|
double HPOWERRAIL;//fs
|
|
double cell_h_def;//fs
|
|
|
|
double chip_layout_overhead; //input
|
|
double macro_layout_overhead;
|
|
double sckt_co_eff;
|
|
|
|
double fringe_cap;//input
|
|
|
|
uint64_t h_dec; //ram_cell_tech_type
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|
|
|
DeviceType sram_cell; // SRAM cell transistor
|
|
DeviceType dram_acc; // DRAM access transistor
|
|
DeviceType dram_wl; // DRAM wordline transistor
|
|
DeviceType peri_global; // peripheral global
|
|
DeviceType cam_cell; // SRAM cell transistor
|
|
|
|
DeviceType sleep_tx; // Sleep transistor cell transistor
|
|
|
|
InterconnectType wire_local;
|
|
InterconnectType wire_inside_mat;
|
|
InterconnectType wire_outside_mat;
|
|
|
|
ScalingFactor scaling_factor;
|
|
|
|
MemoryType sram;
|
|
MemoryType dram;
|
|
MemoryType cam;
|
|
|
|
void display(uint32_t indent = 0);
|
|
bool isEqual(const TechnologyParameter & tech);
|
|
|
|
|
|
void find_upper_and_lower_tech(double technology, int &tech_lo, string& in_file_lo, int &tech_hi, string& in_file_hi);
|
|
void assign_tsv(const string & in_file);
|
|
void init(double technology, bool is_tag);
|
|
TechnologyParameter()
|
|
{
|
|
reset();
|
|
}
|
|
void reset()
|
|
{
|
|
ram_wl_stitching_overhead_ =0; //fs
|
|
min_w_nmos_ =0; //fs
|
|
max_w_nmos_ =0; //fs
|
|
max_w_nmos_dec =0; //fs+ ram_cell_tech_type
|
|
unit_len_wire_del =0; //wire_inside_mat
|
|
FO4 =0; //fs
|
|
kinv =0; //fs
|
|
vpp =0; //input
|
|
w_sense_en =0;//fs
|
|
w_sense_n =0; //fs
|
|
w_sense_p =0; //fs
|
|
sense_delay =0; // input
|
|
sense_dy_power =0; //input
|
|
w_iso =0; //fs
|
|
w_poly_contact =0; //fs
|
|
spacing_poly_to_poly =0; //fs
|
|
spacing_poly_to_contact =0;//fs
|
|
|
|
//CACTI3D auxilary variables
|
|
tsv_pitch =0;
|
|
tsv_diameter =0;
|
|
tsv_length =0;
|
|
tsv_dielec_thickness =0;
|
|
tsv_contact_resistance =0;
|
|
tsv_depletion_width =0;
|
|
tsv_liner_dielectric_constant =0;
|
|
|
|
//CACTI3DD TSV params
|
|
|
|
tsv_parasitic_capacitance_fine =0;
|
|
tsv_parasitic_resistance_fine =0;
|
|
tsv_minimum_area_fine =0;
|
|
|
|
tsv_parasitic_capacitance_coarse =0;
|
|
tsv_parasitic_resistance_coarse =0;
|
|
tsv_minimum_area_coarse =0;
|
|
|
|
//fs
|
|
w_comp_inv_p1 =0;
|
|
w_comp_inv_p2 =0;
|
|
w_comp_inv_p3 =0;
|
|
w_comp_inv_n1 =0;
|
|
w_comp_inv_n2 =0;
|
|
w_comp_inv_n3 =0;
|
|
w_eval_inv_p =0;
|
|
w_eval_inv_n =0;
|
|
w_comp_n =0;
|
|
w_comp_p =0;
|
|
|
|
dram_cell_I_on =0; //ram_cell_tech_type
|
|
dram_cell_Vdd =0;
|
|
dram_cell_I_off_worst_case_len_temp =0;
|
|
dram_cell_C =0;
|
|
gm_sense_amp_latch =0; // depends on many things
|
|
|
|
w_nmos_b_mux =0;//fs
|
|
w_nmos_sa_mux =0;//fs
|
|
w_pmos_bl_precharge =0;//fs
|
|
w_pmos_bl_eq =0;//fs
|
|
MIN_GAP_BET_P_AND_N_DIFFS =0;//fs
|
|
MIN_GAP_BET_SAME_TYPE_DIFFS =0;//fs
|
|
HPOWERRAIL =0;//fs
|
|
cell_h_def =0;//fs
|
|
|
|
chip_layout_overhead = 0;
|
|
macro_layout_overhead = 0;
|
|
sckt_co_eff = 0;
|
|
|
|
fringe_cap=0;//input
|
|
|
|
h_dec=0; //ram_cell_tech_type
|
|
|
|
sram_cell.reset();
|
|
dram_acc.reset();
|
|
dram_wl.reset();
|
|
peri_global.reset();
|
|
cam_cell.reset();
|
|
sleep_tx.reset();
|
|
|
|
scaling_factor.reset();
|
|
|
|
wire_local.reset();
|
|
wire_inside_mat.reset();
|
|
wire_outside_mat.reset();
|
|
|
|
sram.reset();
|
|
dram.reset();
|
|
cam.reset();
|
|
|
|
|
|
}
|
|
};
|
|
|
|
//end ali
|
|
|
|
class DynamicParameter
|
|
{
|
|
public:
|
|
bool is_tag;
|
|
bool pure_ram;
|
|
bool pure_cam;
|
|
bool fully_assoc;
|
|
int tagbits;
|
|
int num_subarrays; // only for leakage computation -- the number of subarrays per bank
|
|
int num_mats; // only for leakage computation -- the number of mats per bank
|
|
double Nspd;
|
|
int Ndwl;
|
|
int Ndbl;
|
|
int Ndcm;
|
|
int deg_bl_muxing;
|
|
int deg_senseamp_muxing_non_associativity;
|
|
int Ndsam_lev_1;
|
|
int Ndsam_lev_2;
|
|
Wire_type wtype; // merge from cacti-7 code to cacti3d code.
|
|
|
|
int number_addr_bits_mat; // per port
|
|
int number_subbanks_decode; // per_port
|
|
int num_di_b_bank_per_port;
|
|
int num_do_b_bank_per_port;
|
|
int num_di_b_mat;
|
|
int num_do_b_mat;
|
|
int num_di_b_subbank;
|
|
int num_do_b_subbank;
|
|
|
|
int num_si_b_mat;
|
|
int num_so_b_mat;
|
|
int num_si_b_subbank;
|
|
int num_so_b_subbank;
|
|
int num_si_b_bank_per_port;
|
|
int num_so_b_bank_per_port;
|
|
|
|
int number_way_select_signals_mat;
|
|
int num_act_mats_hor_dir;
|
|
|
|
int num_act_mats_hor_dir_sl;
|
|
bool is_dram;
|
|
double V_b_sense;
|
|
unsigned int num_r_subarray;
|
|
unsigned int num_c_subarray;
|
|
int tag_num_r_subarray;//: fully associative cache tag and data must be computed together, data and tag must be separate
|
|
int tag_num_c_subarray;
|
|
int data_num_r_subarray;
|
|
int data_num_c_subarray;
|
|
int num_mats_h_dir;
|
|
int num_mats_v_dir;
|
|
uint32_t ram_cell_tech_type;
|
|
double dram_refresh_period;
|
|
|
|
DynamicParameter();
|
|
DynamicParameter(
|
|
bool is_tag_,
|
|
int pure_ram_,
|
|
int pure_cam_,
|
|
double Nspd_,
|
|
unsigned int Ndwl_,
|
|
unsigned int Ndbl_,
|
|
unsigned int Ndcm_,
|
|
unsigned int Ndsam_lev_1_,
|
|
unsigned int Ndsam_lev_2_,
|
|
Wire_type wt, // merged from cacti-7 to cacti3d
|
|
bool is_main_mem_);
|
|
|
|
int use_inp_params;
|
|
unsigned int num_rw_ports;
|
|
unsigned int num_rd_ports;
|
|
unsigned int num_wr_ports;
|
|
unsigned int num_se_rd_ports; // number of single ended read ports
|
|
unsigned int num_search_ports;
|
|
unsigned int out_w;// == nr_bits_out
|
|
bool is_main_mem;
|
|
Area cell, cam_cell;//cell is the sram_cell in both nomal cache/ram and FA.
|
|
bool is_valid;
|
|
private:
|
|
void ECC_adjustment();
|
|
void init_CAM();
|
|
void init_FA();
|
|
bool calc_subarr_rc(unsigned int cap); //to calculate and check subarray rows and columns
|
|
};
|
|
|
|
|
|
|
|
extern InputParameter * g_ip;
|
|
extern TechnologyParameter g_tp;
|
|
|
|
#endif
|
|
|