M2_SETI/T1/TP/TP1/cacti_7/TSV.cc

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2022-11-18 15:07:43 +01:00
/*****************************************************************************
* CACTI 7.0
* SOFTWARE LICENSE AGREEMENT
* Copyright 2015 Hewlett-Packard Development Company, L.P.
* All Rights Reserved
*
* Redistribution and use in source and binary forms, with or without
* modification, are permitted provided that the following conditions are
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* notice, this list of conditions and the following disclaimer;
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* notice, this list of conditions and the following disclaimer in the
* documentation and/or other materials provided with the distribution;
* neither the name of the copyright holders nor the names of its
* contributors may be used to endorse or promote products derived from
* this software without specific prior written permission.
* THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS
* "AS IS" AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT
* LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR
* A PARTICULAR PURPOSE ARE DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT
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* LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; LOSS OF USE,
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***************************************************************************/
#include "TSV.h"
TSV::TSV(enum TSV_type tsv_type,
/*TechnologyParameter::*/DeviceType *dt)://TSV driver's device type set to be peri_global
deviceType(dt), tsv_type(tsv_type)
{
num_gates = 1;
num_gates_min = 1;//Is there a minimum number of stages?
min_w_pmos = deviceType -> n_to_p_eff_curr_drv_ratio * g_tp.min_w_nmos_;
switch (tsv_type)
{
case Fine:
cap = g_tp.tsv_parasitic_capacitance_fine;
res = g_tp.tsv_parasitic_resistance_fine;
min_area = g_tp.tsv_minimum_area_fine;
break;
case Coarse:
cap = g_tp.tsv_parasitic_capacitance_coarse;
res = g_tp.tsv_parasitic_resistance_coarse;
min_area = g_tp.tsv_minimum_area_coarse;
break;
default:
break;
}
for (int i = 0; i < MAX_NUMBER_GATES_STAGE; i++)
{
w_TSV_n[i] = 0;
w_TSV_p[i] = 0;
}
double first_buf_stg_coef = 5; // To tune the total buffer delay.
w_TSV_n[0] = g_tp.min_w_nmos_*first_buf_stg_coef;
w_TSV_p[0] = min_w_pmos *first_buf_stg_coef;
is_dram = 0;
is_wl_tr = 0;
//What does the function assert() mean? Should I put the function here?
compute_buffer_stage();
compute_area();
compute_delay();
}
TSV::~TSV()
{
}
void TSV::compute_buffer_stage()
{
double p_to_n_sz_ratio = deviceType->n_to_p_eff_curr_drv_ratio;
//BEOL parasitics in Katti's E modeling and charac. of TSV. Needs further detailed values.
//double res_beol = 0.1;//inaccurate
//double cap_beol = 1e-15;
//C_load_TSV = cap_beol + cap + cap_beol + gate_C(g_tp.min_w_nmos_ + min_w_pmos, 0);
C_load_TSV = cap + gate_C(g_tp.min_w_nmos_ + min_w_pmos, 0); //+ 57.5e-15;
if(g_ip->print_detail_debug)
{
cout << " The input cap of 1st buffer: " << gate_C(w_TSV_n[0] + w_TSV_p[0], 0) * 1e15 << " fF";
}
double F = C_load_TSV / gate_C(w_TSV_n[0] + w_TSV_p[0], 0);
if(g_ip->print_detail_debug)
{
cout<<"\nF is "<<F<<" \n";
}
//Obtain buffer chain stages using logic effort function. Does stage number have to be even?
num_gates = logical_effort(
num_gates_min,
1,
F,
w_TSV_n,
w_TSV_p,
C_load_TSV,
p_to_n_sz_ratio,
is_dram,
is_wl_tr,
g_tp.max_w_nmos_/*Correct? Decoder uses max_w_nmos_dec*/);
}
void TSV::compute_area()
{
//Obtain the driver chain area and leakage power for TSV
double Vdd = deviceType->Vdd;
double cumulative_area = 0;
double cumulative_curr = 0; // cumulative leakage current
double cumulative_curr_Ig = 0; // cumulative leakage current
Buffer_area.h = g_tp.cell_h_def;//cell_h_def is the assigned height for memory cell (5um), is it correct to use it here?
//logic_effort() didn't give the size of w_n[0] and w_p[0], which is min size inverter
//w_TSV_n[0] = g_tp.min_w_nmos_;
//w_TSV_p[0] = min_w_pmos;
int i;
for (i = 0; i < num_gates; i++)
{
cumulative_area += compute_gate_area(INV, 1, w_TSV_p[i], w_TSV_n[i], Buffer_area.h);
if(g_ip->print_detail_debug)
{
cout << "\n\tArea up to the " << i+1 << " stages is: " << cumulative_area << " um2";
}
cumulative_curr += cmos_Isub_leakage(w_TSV_n[i], w_TSV_p[i], 1, inv, is_dram);
cumulative_curr_Ig += cmos_Ig_leakage(w_TSV_n[i], w_TSV_p[i], 1, inv, is_dram);// The operator += is mistakenly put as = in decoder.cc
}
power.readOp.leakage = cumulative_curr * Vdd;
power.readOp.gate_leakage = cumulative_curr_Ig * Vdd;
Buffer_area.set_area(cumulative_area);
Buffer_area.w = (cumulative_area / Buffer_area.h);
TSV_metal_area.set_area(min_area * 3.1416/16);
if( Buffer_area.get_area() < min_area - TSV_metal_area.get_area() )
area.set_area(min_area);
else
area.set_area(Buffer_area.get_area() + TSV_metal_area.get_area());
}
void TSV::compute_delay()
{
//Buffer chain delay and Dynamic Power
double rd, tf, this_delay, c_load, c_intrinsic, inrisetime = 0/*The initial time*/;
//is_dram, is_wl_tr are declared to be false in the constructor
rd = tr_R_on(w_TSV_n[0], NCH, 1, is_dram, false, is_wl_tr);
c_load = gate_C(w_TSV_n[1] + w_TSV_p[1], 0.0, is_dram, false, is_wl_tr);
c_intrinsic = drain_C_(w_TSV_p[0], PCH, 1, 1, area.h, is_dram, false, is_wl_tr) +
drain_C_(w_TSV_n[0], NCH, 1, 1, area.h, is_dram, false, is_wl_tr);
tf = rd * (c_intrinsic + c_load);
//Refer to horowitz function definition
this_delay = horowitz(inrisetime, tf, 0.5, 0.5, RISE);
delay += this_delay;
inrisetime = this_delay / (1.0 - 0.5);
double Vdd = deviceType -> Vdd;
power.readOp.dynamic += (c_load + c_intrinsic) * Vdd * Vdd;
int i;
for (i = 1; i < num_gates - 1; ++i)
{
rd = tr_R_on(w_TSV_n[i], NCH, 1, is_dram, false, is_wl_tr);
c_load = gate_C(w_TSV_p[i+1] + w_TSV_n[i+1], 0.0, is_dram, false, is_wl_tr);
c_intrinsic = drain_C_(w_TSV_p[i], PCH, 1, 1, area.h, is_dram, false, is_wl_tr) +
drain_C_(w_TSV_n[i], NCH, 1, 1, area.h, is_dram, false, is_wl_tr);
tf = rd * (c_intrinsic + c_load);
this_delay = horowitz(inrisetime, tf, 0.5, 0.5, RISE);
delay += this_delay;
inrisetime = this_delay / (1.0 - 0.5);
power.readOp.dynamic += (c_load + c_intrinsic) * Vdd * Vdd;
}
// add delay of final inverter that drives the TSV
i = num_gates - 1;
c_load = C_load_TSV;
rd = tr_R_on(w_TSV_n[i], NCH, 1, is_dram, false, is_wl_tr);
c_intrinsic = drain_C_(w_TSV_p[i], PCH, 1, 1, area.h, is_dram, false, is_wl_tr) +
drain_C_(w_TSV_n[i], NCH, 1, 1, area.h, is_dram, false, is_wl_tr);
//The delay method for the last stage of buffer chain in Decoder.cc
//double res_beol = 0.1;//inaccurate
//double R_TSV_out = res_beol + res + res_beol;
double R_TSV_out = res;
tf = rd * (c_intrinsic + c_load) + R_TSV_out * c_load / 2;
this_delay = horowitz(inrisetime, tf, 0.5, 0.5, RISE);
delay += this_delay;
power.readOp.dynamic += (c_load + c_intrinsic) * Vdd * Vdd; //Dynamic power done
//Is the delay actually delay/(1.0-0.5)??
//ret_val = this_delay / (1.0 - 0.5);
//return ret_val;//Originally for decoder.cc to get outrise time
/* This part is to obtain delay in the TSV path, refer to Katti's paper.
* It can be used alternatively as the step to get the final-stage delay
double C_ext = c_intrinsic;
R_dr = rd;
double C_int = gate_C(g_tp.min_w_nmos_ + min_w_pmos, 0.0, is_dram, false, is_wl_tr);
delay_TSV_path = 0.693 * (R_dr * C_ext + (R_dr + res_beol) * cap_beol + (R_dr + res_beol + 0.5 * res) * cap
+ (R_dr + res_beol + res + res_beol) * (cap_beol + C_int);
delay += delay_TSV_path;
*/
}
void TSV::print_TSV()
{
cout << "\nTSV Properties:\n\n";
cout << " Delay Optimal - "<<
" \n\tTSV Cap: " << cap * 1e15 << " fF" <<
" \n\tTSV Res: " << res * 1e3 << " mOhm"<<
" \n\tNumber of Buffer Chain stages - " << num_gates <<
" \n\tDelay - " << delay * 1e9 << " (ns) "
" \n\tPowerD - " << power.readOp.dynamic * 1e9<< " (nJ)"
" \n\tPowerL - " << power.readOp.leakage * 1e3<< " (mW)"
" \n\tPowerLgate - " << power.readOp.gate_leakage * 1e3<< " (mW)\n" <<
" \n\tBuffer Area: " << Buffer_area.get_area() << " um2" <<
" \n\tBuffer Height: " << Buffer_area.h << " um" <<
" \n\tBuffer Width: " << Buffer_area.w << " um" <<
" \n\tTSV metal area: " << TSV_metal_area.get_area() << " um2" <<
" \n\tTSV minimum occupied area: " <<min_area << " um2"<<
" \n\tTotal area: " << area.get_area() << " um2";
cout <<endl;
cout <<endl;
}