114 lines
4.6 KiB
Text
114 lines
4.6 KiB
Text
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parameters (unit) hp lstp lop lp-dram comm-dram
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-C_g_ideal (F/um) 6.78e-16 5.18e-16 6.2e-16 1.1e-15 3.59e-16
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-C_fringe (F/um) 5e-17 8e-17 7.3e-17 8e-17 8e-17
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-C_junc (F/um^2) 1e-15 1e-15 1e-15 1e-15 1e-15
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-C_junc_sw (F/um^2) 2.5e-16 2.5e-16 2.5e-16 2.5e-16 2.5e-16
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-l_phy (um) 0.018 0.028 0.022 0.078 0.045
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-l_elec (um) 0.01345 0.0212 0.016 0.0504 0.0298
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-nmos_effective_resistance_multiplier (-) 1.51 1.99 1.76 1.65 1.69
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-Vdd (V) 1 1.1 0.7 1.1 1.1
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-Vth (V) 0.18035 0.50245 0.22599 0.44559 1
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-Vdsat (V) 0.0938 0.0912 0.0571 0.181 0.147
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-I_on_n (A/um) 0.0020466 0.0006662 0.0007489 0.000456 0.0009994
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-I_on_p (A/um) 0.0010233 0.0003331 0.00037445 0.000228 0.0004997
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parameters (unit) temp hp lstp lop lp-dram comm-dram
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-I_off_n (A/um) 0 2.8e-07 1.01e-11 4.03e-09 2.54e-11 1.31e-14
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-I_off_n (A/um) 10 3.28e-07 1.65e-11 5.02e-09 3.94e-11 2.68e-14
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-I_off_n (A/um) 20 3.81e-07 2.62e-11 6.18e-09 5.95e-11 5.25e-14
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-I_off_n (A/um) 30 4.39e-07 4.06e-11 7.51e-09 8.79e-11 9.88e-14
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-I_off_n (A/um) 40 5.02e-07 6.12e-11 9.04e-09 1.27e-10 1.79e-13
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-I_off_n (A/um) 50 5.69e-07 9.02e-11 1.08e-08 1.79e-10 3.15e-13
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-I_off_n (A/um) 60 6.42e-07 1.3e-10 1.27e-08 2.47e-10 5.36e-13
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-I_off_n (A/um) 70 7.2e-07 1.83e-10 1.47e-08 3.31e-10 8.86e-13
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-I_off_n (A/um) 80 8.03e-07 2.51e-10 1.66e-08 4.26e-10 1.42e-12
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-I_off_n (A/um) 90 8.91e-07 3.29e-10 1.84e-08 5.27e-10 2.2e-12
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-I_off_n (A/um) 100 9.84e-07 4.1e-10 2.03e-08 6.46e-10 3.29e-12
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-I_g_on_n (A/um) 0 3.59e-08 9.47e-12 3.24e-08 0 0
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-I_g_on_n (A/um) 10 3.59e-08 9.47e-12 4.01e-08 0 0
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-I_g_on_n (A/um) 20 3.59e-08 9.47e-12 4.9e-08 0 0
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-I_g_on_n (A/um) 30 3.59e-08 9.47e-12 5.92e-08 0 0
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-I_g_on_n (A/um) 40 3.59e-08 9.47e-12 7.08e-08 0 0
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-I_g_on_n (A/um) 50 3.59e-08 9.47e-12 8.38e-08 0 0
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-I_g_on_n (A/um) 60 3.59e-08 9.47e-12 9.82e-08 0 0
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-I_g_on_n (A/um) 70 3.59e-08 9.47e-12 1.14e-07 0 0
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-I_g_on_n (A/um) 80 3.59e-08 9.47e-12 1.29e-07 0 0
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-I_g_on_n (A/um) 90 3.59e-08 9.47e-12 1.43e-07 0 0
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-I_g_on_n (A/um) 100 3.59e-08 9.47e-12 1.54e-07 0 0
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parameters (unit) hp lstp lop lp-dram comm-dram
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-C_ox (F/um^2) 3.77e-14 2.01e-14 2.82e-14 1.41e-14 7.98e-15
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-t_ox (um) 0.00065 0.0014 0.0009 0.0021 0.004
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-n2p_drv_rt (-) 2.41 2.23 2.28 2.05 1.95
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-lch_lk_rdc (-) 0.282008 0.480769 0.520833 1 1
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-Mobility_n (um^2/V.sec) 2.6668e+10 3.6396e+10 5.089e+10 4.263e+10 3.6858e+10
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-gmp_to_gmn_multiplier (-) 1.38 0.99 1.11 0.9 0.9
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-vpp (V) 0 0 0 1.5 2.7
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SRAM
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parameters cell_type hp lstp lop lp-dram comm-dram
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-Wmemcella (um) 0 1.31 1.31 1.31 1.31 1.31
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-Wmemcellpmos (um) 0 1.23 1.23 1.23 1.23 1.23
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-Wmemcellnmos (um) 0 2.08 2.08 2.08 2.08 2.08
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-area_cell (um^2) 0 146 146 146 146 146
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-asp_ratio_cell (-) 0 1.46 1.46 1.46 1.46 1.46
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CAM
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parameters cell_type hp lstp lop lp-dram comm-dram
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-Wmemcella (um) 1 1.31 1.31 1.31 1.31 1.31
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-Wmemcellpmos (um) 1 1.23 1.23 1.23 1.23 1.23
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-Wmemcellnmos (um) 1 2.08 2.08 2.08 2.08 2.08
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-area_cell (um^2) 1 292 292 292 292 292
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-asp_ratio_cell (-) 1 2.92 2.92 2.92 2.92 2.92
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DRAM
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parameters cell_type hp lstp lop lp-dram comm-dram
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-vdd_cell (V) 2 0 0 0 1.1 1.1
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-Wmemcella (um) 2 0 0 0 0.079 0.045
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-Wmemcellpmos (um) 2 0 0 0 0 0
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-Wmemcellnmos (um) 2 0 0 0 0 0
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-area_cell (um^2) 2 0 0 0 0.06162 0.01215
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-asp_ratio_cell (-) 2 0 0 0 1.46 1.5
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parameters hp lstp lop lp-dram comm-dram
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-dram_cell_I_on (A/um) 0 0 0 3.6e-05 2e-05
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-dram_cell_Vdd (V) 0 0 0 1.1 1.1
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-dram_cell_C (F) 0 0 0 2e-14 3e-14
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-dram_cell_I_off_worst_case_len_temp (A/um) 0 0 0 1.95e-11 1e-15
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-logic_scaling_co_eff (-) 0.49
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-core_tx_density (1/um^2) 1.25
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-sckt_co_eff (-) 1.1387
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-chip_layout_overhead (-) 1.2
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-macro_layout_overhead (-) 1.1
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-sense_delay (sec) 4e-11
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-sense_dy_power (J) 2.7e-15
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parameters 0/0 0/1 0/2 0/3 1/0 1/1 1/2 1/3
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-wire_pitch (um) 2.5 4 8 0 2.5 4 8 2
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-barrier_thickness (um) 0 0 0 0 0.004 0.004 0.004 0
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-dishing_thickness (um) 0 0 0 0 0 0 0.0396 0
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-alpha_scatter (-) 1 1 1 0 1 1 1 0
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-aspect_ratio (-) 3 3 3 0 2 2 2.2 0
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-miller_value (-) 1.5 1.5 1.5 0 1.5 1.5 1.5 0
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-horiz_dielectric_constant (-) 1.958 1.958 1.958 0 2.46 2.46 2.46 0
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-vert_dielectric_constant (-) 3.9 3.9 3.9 0 3.9 3.9 3.9 0
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-ild_thickness (um) 0.315 0.315 0.63 0 0.315 0.315 0.55 0
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-fringe_cap (F/um) 1.15e-16 1.15e-16 1.15e-16 1.15e-16 1.15e-16 1.15e-16 1.15e-16 1.15e-16
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-resistivity (u-ohm.m) 0.018 0.018 0.018 0.018 0.022 0.022 0.022 0.022
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parameters 0/0 0/1 0/2 1/0 1/1 1/2
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-wire_r_per_micron (ohm/um) 0 0 0 0 0 0 0 266.667
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-wire_c_per_micron (F/um) 0 0 0 0 0 0 0 1.6276e-15
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-tsv_pitch (um) 2.2 20 0 3.4 40 0
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-tsv_diameter (um) 1.1 3.1 0 1.7 5 0
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-tsv_length (um) 6 40 0 20 50 0
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-tsv_dielec_thickness (um) 0.1 0.2 0 0.1 0.5 0
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-tsv_contact_resistance (ohm) 0.1 0.2 0 0.1 0.2 0
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-tsv_depletion_width (um) 0.6 0.6 0 0.6 0.6 0
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-tsv_liner_dielectric_cons (-) 1.958 1.958 0 2.46 2.46 0
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