114 lines
3.8 KiB
Text
114 lines
3.8 KiB
Text
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parameters (unit) hp lstp lop lp-dram comm-dram
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-C_g_ideal (F/um) 1.328e-15 0 0 0 0
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-C_fringe (F/um) 1.6e-16 0 0 0 0
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-C_junc (F/um^2) 2e-15 0 0 0 0
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-C_junc_sw (F/um^2) 2.5e-16 2.5e-16 2.5e-16 2.5e-16 2.5e-16
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-l_phy (um) 0.12 0 0 0 0
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-l_elec (um) 0.1 0 0 0 0
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-nmos_effective_resistance_multiplier (-) 1.54 0 0 0 0
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-Vdd (V) 1.5 0 0 0 0
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-Vth (V) 0.4407 0 0 0 0
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-Vdsat (V) 0.256 0 0 0 0
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-I_on_n (A/um) 0.00075 0 0 0 0
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-I_on_p (A/um) 0.00035 0 0 0 0
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parameters (unit) temp hp lstp lop lp-dram comm-dram
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-I_off_n (A/um) 0 7e-10 0 0 0 0
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-I_off_n (A/um) 10 8.26e-10 0 0 0 0
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-I_off_n (A/um) 20 9.74e-10 0 0 0 0
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-I_off_n (A/um) 30 1.15e-09 0 0 0 0
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-I_off_n (A/um) 40 1.35e-09 0 0 0 0
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-I_off_n (A/um) 50 1.6e-09 0 0 0 0
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-I_off_n (A/um) 60 1.88e-09 0 0 0 0
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-I_off_n (A/um) 70 2.29e-09 0 0 0 0
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-I_off_n (A/um) 80 2.7e-09 0 0 0 0
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-I_off_n (A/um) 90 3.19e-09 0 0 0 0
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-I_off_n (A/um) 100 3.76e-09 0 0 0 0
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-I_g_on_n (A/um) 0 1.65e-10 0 0 0 0
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-I_g_on_n (A/um) 10 1.65e-10 0 0 0 0
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-I_g_on_n (A/um) 20 1.65e-10 0 0 0 0
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-I_g_on_n (A/um) 30 1.65e-10 0 0 0 0
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-I_g_on_n (A/um) 40 1.65e-10 0 0 0 0
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-I_g_on_n (A/um) 50 1.65e-10 0 0 0 0
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-I_g_on_n (A/um) 60 1.65e-10 0 0 0 0
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-I_g_on_n (A/um) 70 1.65e-10 0 0 0 0
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-I_g_on_n (A/um) 80 1.65e-10 0 0 0 0
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-I_g_on_n (A/um) 90 1.65e-10 0 0 0 0
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-I_g_on_n (A/um) 100 1.65e-10 0 0 0 0
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parameters (unit) hp lstp lop lp-dram comm-dram
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-C_ox (F/um^2) 3.58e-14 0 0 0 0
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-t_ox (um) 0.0024 0 0 0 0
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-n2p_drv_rt (-) 2.45 0 0 0 0
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-lch_lk_rdc (-) 1 0 0 0 0
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-Mobility_n (um^2/V.sec) 3.0216e+10 0 0 0 0
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-gmp_to_gmn_multiplier (-) 1.22 0 0 0 0
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-vpp (V) 0 0 0 0 0
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SRAM
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parameters cell_type hp lstp lop lp-dram comm-dram
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-Wmemcella (um) 0 1.31 1.31 1.31 1.31 1.31
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-Wmemcellpmos (um) 0 1.23 1.23 1.23 1.23 1.23
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-Wmemcellnmos (um) 0 2.08 2.08 2.08 2.08 2.08
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-area_cell (um^2) 0 146 146 146 146 146
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-asp_ratio_cell (-) 0 1.46 1.46 1.46 1.46 1.46
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CAM
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parameters cell_type hp lstp lop lp-dram comm-dram
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-Wmemcella (um) 1 1.31 1.31 1.31 1.31 1.31
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-Wmemcellpmos (um) 1 1.23 1.23 1.23 1.23 1.23
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-Wmemcellnmos (um) 1 2.08 2.08 2.08 2.08 2.08
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-area_cell (um^2) 1 292 292 292 292 292
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-asp_ratio_cell (-) 1 2.92 2.92 2.92 2.92 2.92
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DRAM
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parameters cell_type hp lstp lop lp-dram comm-dram
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-vdd_cell (V) 2 0 0 0 0 0
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-Wmemcella (um) 2 0 0 0 0 0
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-Wmemcellpmos (um) 2 0 0 0 0 0
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-Wmemcellnmos (um) 2 0 0 0 0 0
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-area_cell (um^2) 2 0 0 0 0 0
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-asp_ratio_cell (-) 2 0 0 0 0 0
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parameters hp lstp lop lp-dram comm-dram
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-dram_cell_I_on (A/um) 0 0 0 0 0
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-dram_cell_Vdd (V) 0 0 0 0 0
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-dram_cell_C (F) 0 0 0 0 0
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-dram_cell_I_off_worst_case_len_temp (A/um) 0 0 0 0 0
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-logic_scaling_co_eff (-) 1.5
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-core_tx_density (1/um^2) 0.245
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-sckt_co_eff (-) 1.11
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-chip_layout_overhead (-) 1
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-macro_layout_overhead (-) 1
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-sense_delay (sec) 2.8e-10
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-sense_dy_power (J) 1.47e-14
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parameters 0/0 0/1 0/2 0/3 1/0 1/1 1/2 1/3
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-wire_pitch (um) 2.5 4 8 0 2.5 4 8 2
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-barrier_thickness (um) 0.017 0.017 0.017 0 0.017 0.017 0.017 0
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-dishing_thickness (um) 0 0 0 0 0 0 0.1584 0
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-alpha_scatter (-) 1 1 1 0 1 1 1 0
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-aspect_ratio (-) 2 2.4 2.2 0 2 2 2.2 0
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-miller_value (-) 1.5 1.5 1.5 0 1.5 1.5 1.5 0
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-horiz_dielectric_constant (-) 2.709 2.709 2.709 0 3.038 3.038 3.038 0
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-vert_dielectric_constant (-) 3.9 3.9 3.9 0 3.9 3.9 3.9 0
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-ild_thickness (um) 0.75 0.75 1.5 0 0.75 0.75 1.98 0
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-fringe_cap (F/um) 1.15e-16 1.15e-16 1.15e-16 1.15e-16 1.15e-16 1.15e-16 1.15e-16 1.15e-16
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-resistivity (u-ohm.m) 0.022 0.022 0.022 0.022 0.022 0.022 0.022 0.022
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parameters 0/0 0/1 0/2 1/0 1/1 1/2
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-wire_r_per_micron (ohm/um) 0 0 0 0 0 0 0 66.6667
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-wire_c_per_micron (F/um) 0 0 0 0 0 0 0 6.51042e-16
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-tsv_pitch (um) 0 0 0 0 0 0
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-tsv_diameter (um) 0 0 0 0 0 0
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-tsv_length (um) 0 0 0 0 0 0
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-tsv_dielec_thickness (um) 0 0 0 0 0 0
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-tsv_contact_resistance (ohm) 0 0 0 0 0 0
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-tsv_depletion_width (um) 0 0 0 0 0 0
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-tsv_liner_dielectric_cons (-) 0 0 0 0 0 0
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